Происхождение товара
United States
Driven Configuration
Half-Bridge
Gate Type
IGBT, N-Channel MOSFET
Voltage - Supply
11.5V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 3V
Current - PeakOutput (Source, Sink)
200mA, 350mA
Input Type
Inverting, Non-Inverting, Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap)
600 V
Rise / Fall Time (Typ)
125ns, 50ns
Current - Peak Output
Standard25
Frequency - Switching
standard3
Voltage - Supply (Max)
20 V
Voltage - Output
standard6
Resistance (Ohms)
Standard21
Operating Temperature
-40°C ~ 150°C (TJ)
Voltage - Supply (Min)
11.5 V
Size / Dimension
Standard22
Current - Supply
Standard23
Voltage - Breakdown
Standard16
Current - Output / Channel
Standard18
Frequency - Max
Standard15
Current - Output High, Low
Standard24
